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RESEARCH PRODUCT
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
M. Cristina TaneseLuigia SabbatiniLudovico ValliEliana IevaSabrina ConociLuisa TorsiDonato ColangiuliFrancesco BabudriFrancesco NasoGianluca Maria FarinolaBruno PignataroP. Giorgio ZamboninLivia GiottaFrancesco Marinellisubject
Materials scienceSiliconSilicon dioxideGate dielectricField effectchemistry.chemical_elementConducting polymersNanotechnologySubstrate (electronics)Dielectricchemistry.chemical_compoundMaterials ChemistryComposite materialThin filmConductive polymerLangmuir-Schäfer organic thin-filmsOrganic–inorganic interfaceConducting polymers; Langmuir-Schäfer organic thin-films; Organic field effect transistors; Organic-inorganic interfaceOrganic-inorganic interfaceConducting polymerLangmuir–Schäfer filmMetals and AlloysSurfaces and InterfacesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialstransistors thin films nanotechnology Langmuir-ShaeferchemistryOrganic field effect transistorsOrganic field effect transistordescription
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular structure is observed on the silylated t-SiO2. As to the field-effect properties, the methyl-terminated gate dielectric surface leads to a two order of magnitude mobility enhancement along with a field-effect thickness independent conductance.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-03-01 |