Time-of-flight photoelectron emission microscopy TOF-PEEM: first results

The time structure of the synchrotron radiation at BESSY (Berlin) is used to operate a photoemission electron microscope in a time-of-flight (TOF) mode. The electrons which are emitted from the sample surface with different energies are dispersed in a drift tube subsequent to the imaging optics. The screen of the microscope was replaced by a fast scintillator (tau = 1.4 ns) and the light is detected by an ultra fast gated intensified CCD camera (800 ps gate 1 MHz repetition rate). The resolving power in the energy domain is demonstrated and possible implications on the spatial resolution (chromatic correction) are discussed. Additionally, an improved contrast at very low emission energies i…

Tagungsnachlese Berlin: Atome, Moleküle, Quantenoptik und Plasmen (AMOP), Chemische und Polymerphysik

A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become more stringent in terms of defect sizes and densities that are still acceptable and the development of lithography optics has to go along with the development of new mask defect inspection techniques that are fast and offer high resolution (preferable in the range of the minimum feature size) at the same time. We report on the development and experimental results of a new 'at wavelength' full-field imaging technique for defect inspection of multilayer mask bl…

Actinic EUVL mask blank defect inspection by EUV photoelectron microscopy

A new method for the actinic at-wavelength inspection of defects inside and ontop of Extreme Ultraviolet Lithography (EUVL) multilayer-coated mask blanks is presented. The experimental technique is based on PhotoElectron Emission Microscopy (PEEM) supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5 nm wavelength. Experimental results on programmed defect samples based on e-beam lithographic structures or PSL equivalent silica balls overcoated with an EUV multilayer show that buried defects scaling down to 50 nm in lateral size are detectable with further scalability down to 30 nm …

Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode

We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.

Photoemission microscopy with microspot-XPS by use of undulator radiation and a high-throughput multilayer monochromator at BESSY

We present a new experiment for photoelectron microspectroscopy by use of undulator radiation, which has been set up at the beamline U2 at the Berlin electron storage ring BESSY 1. This approach employs a non-imaging simulated hemispherical electron energy analyser attached to an imaging photoemission electron microscope (FOCUS IS-PEEM) with integrated microarea selector. The photoemission microscope exhibits a lateral resolution of 25 nm (with 4.9 eV UV-excitation), while the resolution with incident synchrotron radiation in the soft X-ray range is about 100-120 nm (mainly due to chromatic aberrations). Photoemission microscopy as well as photoelectron microspectroscopy of selected areas o…