6533b853fe1ef96bd12acb39

RESEARCH PRODUCT

Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode

Ulf KleinebergUlf KleinebergJingquan LinJingquan LinGerd SchönhenseM. MerkelM. EscherJ. MaulUlrich HeinzmannD. ValdaitsevAndreas OelsnerH. SeitzN. Weber

subject

Materials sciencebusiness.industryphotoemission electronExtreme ultraviolet lithographydefect analysisPhase (waves)Surfaces and InterfacesCondensed Matter PhysicsBlankSurfaces Coatings and Filmslaw.inventionStanding waveextreme ultraviolet lithography (EUVL)WavelengthPhotoemission electron microscopyOpticslawmultilayer mask blanksMaterials ChemistryOptoelectronicsEUV-PEEMPhotolithographybusinessLithographymicroscopy (PEEM)

description

We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.

yearjournalcountryeditionlanguage
2007-10-01
10.1016/j.susc.2007.05.041https://doi.org/10.1016/j.susc.2007.05.041