0000000000280833
AUTHOR
Ulf Kleineberg
Time-of-flight photoelectron emission microscopy TOF-PEEM: first results
The time structure of the synchrotron radiation at BESSY (Berlin) is used to operate a photoemission electron microscope in a time-of-flight (TOF) mode. The electrons which are emitted from the sample surface with different energies are dispersed in a drift tube subsequent to the imaging optics. The screen of the microscope was replaced by a fast scintillator (tau = 1.4 ns) and the light is detected by an ultra fast gated intensified CCD camera (800 ps gate 1 MHz repetition rate). The resolving power in the energy domain is demonstrated and possible implications on the spatial resolution (chromatic correction) are discussed. Additionally, an improved contrast at very low emission energies i…
Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy
We report on recent developments of an "at-wavelength" full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron microscopy (EUV-PEEM). A bump-type line defect with a width of approximately 35nm that is buried beneath Mo/Si multilayer has been detected clearly, and first inspection results obtained from a patterned TaN absorber EUVL mask sample is reported. Different image contrast of a similar width of multilayer-covered substrate line defect and on top TaN absorber square has been observed in the EUV-PEEM images, and origin of the difference in their EUV-PEEM image contra…
A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy
Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become more stringent in terms of defect sizes and densities that are still acceptable and the development of lithography optics has to go along with the development of new mask defect inspection techniques that are fast and offer high resolution (preferable in the range of the minimum feature size) at the same time. We report on the development and experimental results of a new 'at wavelength' full-field imaging technique for defect inspection of multilayer mask bl…
Actinic inspection of sub-50 nm EUV mask blank defects
A new actinic mask inspection technology to probe nano-scaled defects buried underneath a Mo/Si multilayer reflection coating of an Extreme Ultraviolet Lithography mask blank has been implemented using EUV Photoemission Electron Microscopy (EUV-PEEM). EUV PEEM images of programmed defect structures of various lateral and vertical sizes recorded at around 13 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps enhancing the visibility of the edges of the phase defects which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.
A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
Actinic EUVL mask blank defect inspection by EUV photoelectron microscopy
A new method for the actinic at-wavelength inspection of defects inside and ontop of Extreme Ultraviolet Lithography (EUVL) multilayer-coated mask blanks is presented. The experimental technique is based on PhotoElectron Emission Microscopy (PEEM) supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5 nm wavelength. Experimental results on programmed defect samples based on e-beam lithographic structures or PSL equivalent silica balls overcoated with an EUV multilayer show that buried defects scaling down to 50 nm in lateral size are detectable with further scalability down to 30 nm …
Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode
We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.
Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy
A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting extreme ultraviolet mask blank phase defects. A depth-resolved det…
Photoemission microscopy with microspot-XPS by use of undulator radiation and a high-throughput multilayer monochromator at BESSY
We present a new experiment for photoelectron microspectroscopy by use of undulator radiation, which has been set up at the beamline U2 at the Berlin electron storage ring BESSY 1. This approach employs a non-imaging simulated hemispherical electron energy analyser attached to an imaging photoemission electron microscope (FOCUS IS-PEEM) with integrated microarea selector. The photoemission microscope exhibits a lateral resolution of 25 nm (with 4.9 eV UV-excitation), while the resolution with incident synchrotron radiation in the soft X-ray range is about 100-120 nm (mainly due to chromatic aberrations). Photoemission microscopy as well as photoelectron microspectroscopy of selected areas o…