6533b81ffe1ef96bd1278e85
RESEARCH PRODUCT
Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy
G. SchoenhenseN. WeberJingquan LinM. EscherJ. MaulUlf KleinebergCh. HolfeldM. Merkelsubject
Materials sciencebusiness.industryExtreme ultraviolet lithographySubstrate (electronics)Condensed Matter PhysicsBlankAtomic and Molecular Physics and OpticsImage contrastSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionPhotoemission electron microscopyOpticslawOptoelectronicsElectrical and Electronic EngineeringPhotolithographyElectron microscopebusinessLine (formation)description
We report on recent developments of an "at-wavelength" full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron microscopy (EUV-PEEM). A bump-type line defect with a width of approximately 35nm that is buried beneath Mo/Si multilayer has been detected clearly, and first inspection results obtained from a patterned TaN absorber EUVL mask sample is reported. Different image contrast of a similar width of multilayer-covered substrate line defect and on top TaN absorber square has been observed in the EUV-PEEM images, and origin of the difference in their EUV-PEEM image contrast is discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-05-01 | Microelectronic Engineering |