0000000000281568
AUTHOR
A. R. Goi
Low-temperature exciton absorption in InSe under pressure.
We have investigated the effect of pressure on the lowest direct band-edge exciton of the layered semiconductor InSe by optical-absorption measurements at 10 K and for pressures up to 4 GPa. The Elliott-Toyozawa formalism is used to analyze the line shape of the exciton absorption spectra. In this way we determine the pressure dependence of the lowest direct band gap, the exciton binding energy, and the exciton linewidth. The band gap exhibits a pronounced nonlinear shift with pressure, which is a consequence of the strong anisotropy of intralayer and interlayer bonding. The exciton binding energy decreases with pressure, mainly due to the large increase of the low-frequency dielectric cons…
Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system
We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in…