6533b871fe1ef96bd12d17af

RESEARCH PRODUCT

Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system

subject

description

We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in terms of subband-structure calculations within the envelope-function approximation.