0000000000281569
AUTHOR
K. Syassen
Low-temperature exciton absorption in InSe under pressure.
We have investigated the effect of pressure on the lowest direct band-edge exciton of the layered semiconductor InSe by optical-absorption measurements at 10 K and for pressures up to 4 GPa. The Elliott-Toyozawa formalism is used to analyze the line shape of the exciton absorption spectra. In this way we determine the pressure dependence of the lowest direct band gap, the exciton binding energy, and the exciton linewidth. The band gap exhibits a pronounced nonlinear shift with pressure, which is a consequence of the strong anisotropy of intralayer and interlayer bonding. The exciton binding energy decreases with pressure, mainly due to the large increase of the low-frequency dielectric cons…
Lattice dynamics ofYVO4at high pressures
We report an experimental and theoretical lattice-dynamics study of yttrium orthovanadate $({\text{YVO}}_{4})$ up to 33 GPa together with a theoretical study of its structural stability under pressure. Raman-active modes of the zircon phase are observed up to 7.5 GPa, where the onset of an irreversible zircon-to-scheelite phase transition is detected, and Raman-active modes in the scheelite structure are observed up to 20 GPa, where a reversible second-order phase transition occurs. Our ab initio total-energy calculations support that the second-order phase transition in ${\text{YVO}}_{4}$ is from the scheelite to the monoclinic M-fergusonite structure. The M-fergusonite structure remains u…
Vibrational properties of ZnTe at high pressures
Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T = 300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Gruneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and ort…
Pressure dependence of optical phonons in ZnCdSe alloys
5 páginas, 2 figuras, 2 tablas.-- PACS 62.50.+p, 63.20.Dj, 78.30.Fs, 78.66.Hf.-- et al.
Effect of Pressure on Direct Optical Transitions of ?-InSe
We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…
Photoluminescence from strained InAs monolayers in GaAs under pressure
bulk GaAs. At pressures above the band crossover two emission bands are observed. These bands, characterized by having negative pressure coefBcients, are attributed to the type-I transition between conduction-band X „and heavy-hole states of the InAs monolayer and the type-II transition &om X states in GaAs to InAs heavy-hole states. The results are interpreted in terms of tight-binding band-structure calculations for the strained InAs-monolayer — bulk-GaAs system. I. INTRODUCTION Highly strained InAs jGaAs heterostructures have recently attracted interest due to their unusual electronic and optical properties. ~ 4 Epitaxial isomorphic growth of InAs on GaAs can be achieved only up to a sma…
Raman Scattering in CuCl under Pressure
Raman spectra of CuCl were measured under hydrostatic pressures up to 14 GPa at low temperatures (T = 5 K). The anomaly in the Raman lineshape of zincblende CuCl at frequencies near the transverse-optic (TO) mode, which consists of a broad structure with several maxima, disappears at a pressure near 3 GPa. This effect is well reproduced by a model calculation of the anharmonic coupling of the TO mode to acoustic two-phonon states (Fermi resonance). Alternative interpretations of the TO Raman anomaly in terms of local vibrational modes of Cu atoms in off-center positions are not supported by the present results. Raman spectra indicate the existence of the phase CuCl-IIa in a narrow pressure …
Lattice phonon modes of the high-pressure phase CuCl-IV
Raman spectra of isotopically pure CuCl samples ${(}^{63}\mathrm{CuCl}$ and ${}^{65}\mathrm{CuCl})$ were measured under hydrostatic pressure up to 14 GPa at low temperature $(5 \mathrm{K}).$ Up to six Raman modes were resolved for the binary BC8-analog phase CuCl-IV in the range from 4.1 to 14 GPa. The phonon dispersion relations of this phase were calculated within a rigid ion model. Based on this calculation an assignment for the observed Raman-active modes is proposed. The calculated pressure dependences of mode frequencies reproduce the experimental results. Raman spectra support the existence of the phase CuCl-IIa in a narrow pressure range from 3.3 to 4.1 GPa.
Effect of pressure on the structural properties and electronic band structure of GaSe
The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the e-GaSe to a disordered NaCi-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered e-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct expe…
Vibrational Properties of InSe under Pressure: Experiment and Theory
The pressure dependence of the phonon modes in the layered semiconductor γ-InSe has been investigated experimentally and theoretically for pressures up to 11 GPa. The mode Gruneisen parameters of all Raman-active zone-center phonons have been determined by Raman scattering under pressure. In addition, features corresponding to second and third-order scattering processes are apparent in the Raman spectra under resonance conditions, from which information about zone-edge modes can be obtained. For the assignment of the observed Raman features to vibrational modes we have calculated the phonon dispersion curves using a rigid-ion model including couplings to first-nearest neighbors and long-ran…
High-Pressure Raman Study of Zincblende, Cinnabar, and Cmcm Phases Of ZnTe
Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cmcm phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.
Effect of pressure on structural properties and energy band gaps of γ-InSe
We have investigated theoretically the effect of hydrostatic pressure on interatomic bond lengths and energy band gaps of γ-InSe. Total energy calculations were performed using the linear augmented plane wave (LAPW) method, taking into account scalar relativistic corrections as well as spin-orbit coupling. Internal structural parameters were optimized for different pressures by adopting as input the unit cell parameters known from experiment. Our theoretical results for the nearest-neighbor In-Se bond length are in excellent agreement with a recent experimental determination from high-pressure EXAFS measurements. The covalent In-In bond is found to be more compressible than the partially io…
Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system
We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
6 páginas, 3 figuras.