showing 10 related works from this author
Bottom-Up, On-Surface-Synthesized Armchair Graphene Nanoribbons for Ultra-High-Power Micro-Supercapacitors
2020
Bottom-up-synthesized graphene nanoribbons (GNRs) with excellent electronic properties are promising materials for energy storage systems. Herein, we report bottom-up-synthesized GNR films employed as electrode materials for micro-supercapacitors (MSCs). The micro-device delivers an excellent volumetric capacitance and an ultra-high power density. The electrochemical performance of MSCs could be correlated with the charge carrier mobility within the differently employed GNRs, as determined by pump–probe terahertz spectroscopy studies.
Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors.
2018
Graphene nanoribbons (GNRs) with various structures and properties can be synthesized in solution or on surface.
Charge transport mechanism in networks of armchair graphene nanoribbons
2020
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formati…
Dimensional Confinement in Carbon-based Structures - From 3D to 1D
2017
We present an overview of charge transport in selected one-, two- and three-dimensional carbon-based materials with exciting properties. The systems are atomically defined bottom-up synthesized graphene nanoribbons, doped graphene and turbostratic graphene micro-disks, where up to 100 graphene layers are rotationally stacked. For turbostratic graphene we show how this system lends itself to spintronic applications. This follows from the inner graphene layers where charge carriers are protected and thus highly mobile. Doped graphene and graphene nanoribbons offer the possibility to tailor the electronic properties of graphene either by introducing heteroatoms or by confining the system geome…
Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of Low-Band-Gap N = 9 Armchair Graphene Nanoribbons.
2017
Recent advances in bottom-up synthesis of atomically defined graphene nanoribbons (GNRs) with various microstructures and properties have demonstrated their promise in electronic and optoelectronic devices. Here we synthesized N = 9 armchair graphene nanoribbons (9-AGNRs) with a low optical band gap of ∼1.0 eV and extended absorption into the infrared range by an efficient chemical vapor deposition process. Time-resolved terahertz spectroscopy was employed to characterize the photoconductivity in 9-AGNRs and revealed their high intrinsic charge-carrier mobility of approximately 350 cm2·V-1·s-1.
Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene
2019
Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. Here, we employ terahertz spectroscopy as a contact-free means to investigate the impact of ubiquitous cations (Li+, Na+, K+, and Ca2+) in aqueous solution on the electronic properties of SiO2-supported graphene. We find that, without applying any external potential, cations can shift the Fermi energy of initially hole-doped graphene by ∼200 meV up to the Dirac point, thus counteracting the initial substrate-induced hole dop…
Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration
2016
Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different …
Lateral Fusion of Chemical Vapor Deposited N = 5 Armchair Graphene Nanoribbons
2017
Bottom-up synthesis of low-bandgap graphene nanoribbons with various widths is of great importance for their applications in electronic and optoelectronic devices. Here we demonstrate a synthesis of N = 5 armchair graphene nanoribbons (5-AGNRs) and their lateral fusion into wider AGNRs, by a chemical vapor deposition method. The efficient formation of 10- and 15- AGNRs is revealed by a combination of different spectroscopic methods, including Raman and UV−visnear-infrared spectroscopy as well as by scanning tunneling microscopy. The degree of fusion and thus the optical and electronic properties of the resulting GNRs can be controlled by the annealing temperature, providing GNR films with o…
Hysteresis in graphene nanoribbon field-effect devices
2020
Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the …
CCDC 1521825: Experimental Crystal Structure Determination
2016
Related Article: Zongping Chen, Wen Zhang, Carlos-Andres Palma, Alberto Lodi Rizzini, Bilu Liu, Ahmad Abbas, Nils Richter, Leonardo Martini, Xiao-Ye Wang, Nicola Cavani, Hao Lu, Neeraj Mishra, Camilla Coletti, Reinhard Berger, Florian Klappenberger, Mathias Kläui, Andrea Candini, Marco Affronte, Chongwu Zhou, Valentina De Renzi, Umberto del Pennino, Johannes V. Barth, Hans Joachim Räder, Akimitsu Narita, Xinliang Feng, and Klaus Müllen|2016|J.Am.Chem.Soc.|138|15488|doi:10.1021/jacs.6b10374