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RESEARCH PRODUCT
Hysteresis in graphene nanoribbon field-effect devices
Klaus MüllenAkimitsu NaritaAlexander TriesAlexander TriesHai I. WangZongping ChenNils RichterMathias KläuiMischa Bonnsubject
Materials scienceCondensed matter physicsGrapheneTransistorGeneral Physics and AstronomyField effect02 engineering and technologyTrappingChemical vapor deposition010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionCondensed Matter::Materials ScienceHysteresislawField-effect transistorPhysical and Theoretical Chemistry0210 nano-technologyGraphene nanoribbonsdescription
Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-02-28 | Physical Chemistry Chemical Physics |