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RESEARCH PRODUCT

Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

Nicola CavaniUmberto Del PenninoAndrea CandiniWen ZhangXiao-ye WangBilu LiuValentina De RenziCamilla ColettiChongwu ZhouReinhard BergerNils RichterFlorian KlappenbergerZongping ChenNeeraj MishraLeonardo MartiniHans Joachim RäderMarco AffronteAlberto Lodi RizziniAhmad N. AbbasAhmad N. AbbasJohannes V. BarthHao LuKlaus MüllenXinliang FengMathias KläuiAkimitsu NaritaCarlos-andres Palma

subject

FabricationBAND-GAPNanotechnologyHETEROJUNCTIONSORGANIC FIELD EFFECT TRANSISTORS02 engineering and technologyChemical vapor deposition010402 general chemistry01 natural sciencesBiochemistryCatalysislaw.inventionColloid and Surface ChemistrylawNanoscopic scaleNANOGRAPHENESPECTROSCOPYbusiness.industryChemistryGrapheneTransistorGeneral Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesgraphene nanoribbon CVD HREELS spectroscopy electronic propertiesGRAPHENE NANORIBBONSPhotonics0210 nano-technologybusinessGraphene nanoribbonsAmbient pressure

description

Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the heteroatom doping and heterojunctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.

10.1021/jacs.6b10374https://hdl.handle.net/21.11116/0000-0001-40D1-A11858/00-001M-0000-002C-F1B8-9