Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of valve metals alloys

Amorphous and/or nanocrystalline oxide films can be easily prepared electrochemically by anodizing. The anodizing allows to grow oxides with structural and compositional features easily and strictly controlled by the process parameters.

Influences of structure and composition on the photoelectrochemical behaviour of anodic films on Ti-Zr alloys

Electrochemical fabrication of high k Al-Ta mixed oxides

Solid State Properties of Anodic Hf-Nb Mixed Oxides

In last decades, HfO2 and Nb2O5 have been extensively studied due to their many potential applications, from corrosion protection to CMOS (as high-k gate dielectrics) [1-2] and ReRAM technologies [3-4]. For these technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is needful. Scientific community gradually shifted its interest from pure metal oxides to mixed metal oxides trying to exploit the advantages of pure oxides and to suppress their disadvantages. Mixed oxides can be grown on valve metals alloys by anodizing, a simple and low cost electrochemical process for pr…

Anodic TiO2 in ReRAM: Influence of Si-doping on the Resistive Switching Properties of Titanium Oxide

TiO2 has attracted much attention due to its potential widespread applications, including capacitors, photocatalysis, solar energy conversion and, more recently, redox-based random access memories (ReRAM). For micro and nano-electronics applications, TiO2 is usually grown through Chemical and Physical Vapour Deposition techniques, such as Atomic Layer Deposition (ALD), Pulsed Laser Deposition (PLD), Sputtering and so on. In ReRAM field, the control of oxide structure (crystallinity, defects concentration etc.) and the choice of electrodes are crucial to have resistive switching phenomena inside the oxide. Thus, anodizing can be proposed as a simple and low cost way to grow TiO2 and to tune …

The influence of composition on the solid state properties of anodic films on Al-Ta alloys

Microelectronics is very important for almost all kinds of technology evolutions in the past four decades. In this area, the dielectrics science occupies a prominent place in providing the dominant technology in integrated capacitors or gate insulators.

Amorphous to Crystalline Transition in Anodic Oxide on Ti and Ti-Si alloys: A Photoelectrochemical Study.

Characterization of Anodic Oxides on Magnetron Sputtered Ta-Nb Alloys by Photocurrent Spectroscopy and Differential Admittance Measurements

Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys

Anodic films of different thickness (∼30 nm and 70 nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed…

Tuning of solid state properties of Al-Ta mixed oxides

Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of Sputtering-Deposited Al-Ta alloys

Anodic films were grown to 20 V on sputtering-deposited Al–Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the intern…