0000000000304193
AUTHOR
A. De Marcellis
Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement
We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
Abstract In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a de…
Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …