0000000000337775
AUTHOR
Orapin Chienthavorn
showing 3 related works from this author
Lithographic fabrication of soda-lime glass based microfluidics
2013
Abstract Glass is an important material for chemical processing and analysis because of its relatively low cost, mechanical strength, chemical inertness, optical transparency, and electrical insulation and temperature resistance far beyond that of most polymeric materials. We have investigated techniques for direct writing with MeV ions on soda-lime glass as well as capping procedures to form closed buried channels suitable for high-pressure driven flow. Exposure and development of open-channel structures was studied using a combination of programmable proximity aperture lithography and different developers. Unlike our previous work on MeV ion beam lithography of natural silica where an 8% …
Why are hydrogen ions best for MeV ion beam lithography?
2013
The exposure characteristics of poly-(methyl methacrylate) (PMMA) for 2MeV ^1H^+, 3MeV ^4He^2^+ and 6MeV ^1^2C^3^+ have been investigated. The samples were characterised using Atomic Force Microscopy (AFM), optical microscopy and Raman spectroscopy. Development was carried out using a 7:3 propan-2-ol:H"2O mixture to determine clearing and cross-linking fluences. It was found that protons had a considerably wider tolerance to exposure variations and a smaller span of doses within the ion track. Furthermore, the void formation and consequent stress-induced surface roughening were smaller for protons. For all ions, the C?C bond Raman signal increased continuously with dose and fluence, even we…
Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
2011
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.