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RESEARCH PRODUCT
Why are hydrogen ions best for MeV ion beam lithography?
Mika PetterssonNitipon PuttaraksaRattanaporn NoraratMari NapariHarry J. WhitlowPeerapong YotprayoonsakMikko LaitinenTimo SajavaaraOrapin ChienthavornA.r. Ananda Sagarisubject
Materials scienceHydrogenta114Ion trackAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsIon beam lithographyFluenceAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsIonlaw.inventionsymbols.namesakechemistry.chemical_compoundchemistryOptical microscopelawsymbolsElectrical and Electronic EngineeringMethyl methacrylateRaman spectroscopyta216ta116description
The exposure characteristics of poly-(methyl methacrylate) (PMMA) for 2MeV ^1H^+, 3MeV ^4He^2^+ and 6MeV ^1^2C^3^+ have been investigated. The samples were characterised using Atomic Force Microscopy (AFM), optical microscopy and Raman spectroscopy. Development was carried out using a 7:3 propan-2-ol:H"2O mixture to determine clearing and cross-linking fluences. It was found that protons had a considerably wider tolerance to exposure variations and a smaller span of doses within the ion track. Furthermore, the void formation and consequent stress-induced surface roughening were smaller for protons. For all ions, the C?C bond Raman signal increased continuously with dose and fluence, even well above that required for total cross linking.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-02-01 | Microelectronic Engineering |