0000000000346909
AUTHOR
V. Touboltsev
Retention of Pb isotopes in glass surfaces for retrospective assessment of radon exposure
Abstract In recent years there has been increasing interest in radio-epidemiological techniques to retrospectively measure the radon dose exposure by determining the activity of 210Pb, the longest-lived 222Rn progeny, in glass surface layers. In this study the diffusion of 39 keV 209Pb+ ions implanted into glass using the IGISOL facility has been studied under conditions that mimic the recoil implantation of 210Pb from 222Rn. The resulting depth distributions of 209Pb were then measured after heat treatment in vacuum at different temperatures by a sputter erosion technique. The diffusion coefficient could be described by an Arrhenius equation D = D0exp(−H/kT) where D 0 = 0.30 - 0.24 + 1.14 …
Annealing reactions in lead implanted copper
Abstract The terminal solubility of Pb in Cu is extremely low and does not exceed 0.09 at.% at 875 K. Ion implantation of lead ions at 100 keV into Cu single crystals produces metastable solutions. Annealing of the samples causes redistribution of the implanted atoms to equilibrium or near-equilibrium aggregate states which may be reflected in a change in the type of impurity lattice location in the host matrix. We have studied the effect of annealing on single crystalline Cu implanted at temperatures around 375 K with Pb to a concentration of a 1–2 at.%. Rutherford backscattering/channeling analysis and transmission electron microscopy of the as-implanted samples have shown that the implan…
Detection system for depth profiling of radiotracers
A reliable and efficient detection system essentially needed in the depth profiling of radiotracers consisting of two large PIN-diode arrays has been constructed. The requirements put forward to the detector system and the ability of the PIN-diode array to meet these demands are discussed. A comparison to a conventionally used liquid scintillation detector is presented by measuring an as-implanted 31Si profile in amorphous T21 ceramic by both apparatuses.
Phase Slip Phenomena in Ultra-Thin Superconducting Wires
We present results on phase-slip phenomena in a superconducting wire which can be considered as quasi-one dimensional (1D) if its characteristic transverse dimension \( \sqrt \sigma\) (√ being the cross section) is smaller than the coherence length Λ(T). The shape of the bottom part of the resistive transition R(T) of a 1D superconducting strip is described by the model of phase slips activation. If the wire is infinitely long, then there is always a finite probability that a small part of the sample is instantly driven normal.
On erbium lattice location in ion implanted Si0.75Ge0.25 alloy
A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 1015 cm−2 at temperature of 550 °C. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with rando…
High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties
AbstractHigh-quality crystalline Si1-xGex (x=0.10 and 0.25) alloys were implanted with 70 keV Er+ ions at temperatures of 350°C and 550°C to a fluence of 1015 cm−2. In-situ Rutherford backscattering/channeling (RBS) analysis supplemented with transmission electron microscopy (TEM) showed that as-implanted alloys were in form of ternary solid solutions with a peak Er concentration of 1 at.% without any trace of Er-Si or Er-Ge precipitation.In the samples implanted at 350°C Er atoms were found to be distributed randomly in the amorphous host matrix. Post-implantation annealing at different temperatures up to 600° showed that the solid phase epitaxial regrowth of the damaged layers strongly de…
Quantum fluctuations in ultranarrow superconducting aluminum nanowires
Progressive reduction of the effective diameter of a nanowire is applied to trace evolution of the shape of the superconducting transition $R(T)$ in quasi-one-dimensional aluminum structures. In nanowires with effective diameter $\ensuremath{\leqslant}15\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ the $R(T)$ dependences are much wider than predicted by the model of thermally activated phase slips. The effect can be explained by quantum fluctuations of the order parameter. Negative magnetoresistance is observed in the thinnest samples. Experimental results are in reasonable agreement with existing theoretical models. The effect should have a universal validity, indicating a breakdown of the zero-…
Superconductivity suppression in Fe-implanted thin Al films
At present, ion implantation into metallic systems is given increasing attention, aiming at achieving properties and functionalities of technologically valuable materials not easily available via conventional techniques. In our experiments thin Al films were implanted with Fe ions in order to find out how the superconductive properties of the metal can be modified at will. The purpose was twofold, viz., first, to study the basic physics of superconductivity in low-dimensional metallic structures doped with impurities. The second purpose was to apply ion implantation for the suppression of undesired superconductivity in aluminum widely used for fabrication of micro- and nanodevices operated …
Size Dependent Breakdown of Superconductivity in Ultranarrow Nanowires
Below a certain temperature Tc (typically cryogenic), some materials lose their electric resistance R entering a superconducting state. Folowing the general trend toward a large scale integration of a greater number of electronic components, it is desirable to use superconducting elements in order to minimize heat dissipation. It is expected that the basic property of a superconductor, i.e. dissipationless electric current, will be preserved at reduced scales required by modern nanoelectronics. Unfortunately, there are indications that for a certain critical size limit of the order of 10 nm, below which a "superconducting" wire is no longer a superconductor in a sense that it acquires a fin…