0000000000347333

AUTHOR

I. Drikis

showing 3 related works from this author

Viscous fingering in magnetic fluids: numerical simulation of radial Hele–Shaw flow

1999

Abstract In this paper, the viscous fingering phenomena of the magnetic liquids in the case when the magnetic field is applied normally to the Hele–Shaw cell is investigated by the numerical simulation technique. It is shown that the magnetic field causes additional destabilization of the free interface arising at the air injection in the magnetic liquid. Here the peculiarities of the interface dynamics – inward motion of the tips of the fjords, the gyration radius dependence on the perimeter found by the numerical simulations are in good accordance with the experiments.

Materials scienceComputer simulationDynamics (mechanics)MechanicsRadiusCondensed Matter PhysicsGyrationElectronic Optical and Magnetic MaterialsMagnetic fieldCondensed Matter::Soft Condensed MatterPhysics::Fluid DynamicsViscous fingeringHele-Shaw flowClassical mechanicsSecondary air injectionJournal of Magnetism and Magnetic Materials
researchProduct

2D shape relaxation dynamics in amphiphile monolayers

2007

The shape relaxation dynamics of the droplets in amphiphile monolayers is studied in Darcy approximation. It is shown by numerical experiments that relaxation from the highly extended dumbbell configurations can be described by simple physical model according to which the dissipation is concentrated on circular tips. By numerical simulation it is illustrated that longrange dipolar interactions lead to the stabilization of the shape relaxation process with respect to the formation of a narrow neck causing the rupture of the droplet when dipolar forces are absent. Effect of the dipolar forces on the shape-relaxation process can be accounted by the slope of the relaxation curve at small deviat…

DipoleHele-Shaw flowComputer simulationComputational chemistryChemistryMonolayerDynamics (mechanics)Relaxation (physics)DumbbellDissipationMolecular physics
researchProduct

Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon

2017

Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…

010302 applied physicsMaterials scienceSiliconTriple pointPhysics::Opticschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesThermal expansionInorganic ChemistryStress (mechanics)CrystalCrystallographychemistryCondensed Matter::Superconductivity0103 physical sciencesMaterials Chemistryvon Mises yield criterionComposite material0210 nano-technologyLine (formation)Journal of Crystal Growth
researchProduct