0000000000352764
AUTHOR
A. Segura
showing 8 related works from this author
Surface passivation of gallium selenide by nitrogen implantation
2002
In this paper we report on the characterization of nitrogen-implanted single-crystal GaSe samples. Nitrogen atoms were implanted at 80 keV, with doses ranging from 4 × 10 13 to 10 15 N + ions cm -2 . Next, samples were aged in open air and characterized by small-area XPS, together with an unimplanted clean surface, in order to quantify the effects of the nitrogen implantation. In general, we found that the oxidation was fully prevented in N + -implanted samples.
Excitonic absorption and Urbach's tail in bismuth sulfide single crystals
1988
The absorption coefficient of bismuth sulfide single crystals has been measured through more than four orders of magnitude and in the range of energies from 1.25 to 1.70 eV. A detailed study as a function of temperature has been carried out from 29 to 300 K. An Urbach tail for low values of absorption has been found. This tail and its temperature evolution fit the expression for ionic materials. An excitonic region appears at low temperature and the shape of the exciton peak is Gaussian, which corresponds to a strong exciton-phonon coupling. The exciton binding energy is estimated (28±3 meV) and then the energy gap at 29 K is obtained (Eg=1.523±0.003 eV). The fundamental electronic transiti…
Indium Selenide Solar Cells
1981
Indium selenide photovoltaic devices are described. Transport and photovoltaic properties are discussed. Efficiencies of 6% are reported and ways of improvement are proposed.
Positrons and electron-irradiation induced defects in the layered semiconductor InSe
1992
The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two…
Transport properties of silicon doped n-indium selenide
1992
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
Pbca-Type In2O3: The High-Pressure Post-Corundum phase at Room Temperature.
2014
High-pressure powder X-ray diffraction and Raman scattering measurements in cubic bixbyite-type indium oxide (c-In2O3) have been performed at room temperature. On increasing pressure c-In2O3 undergoes a transition to the Rh2O3-II structure but on decreasing pressure Rh2O3-II-type In2O3 undergoes a transition to a previously unknown phase with Pbca space group which is isostructural to Rh2O3-III. On further decrease of pressure, we observed a phase transition to the metastable corundum-type In2O3 near room conditions. Recompression of the metastable corundum-type In2O3 at room temperature leads to a transition to the Rh2O3-III phase, thus showing that the Rh2O3-III phase is the post-corundum…
Pressure-induced magnetic switching and linkage isomerism in K0.4Fe4[Cr(CN)6]2.8 x 16 H2O: X-ray absorption and magnetic circular dichroism studies.
2008
The effect of applied pressure on the magnetic properties of the Prussian blue analogue K0.4Fe4[Cr(CN)6]2.8 x 16 H2O (1) has been analyzed by dc and ac magnetic susceptibility measurements. Under ambient conditions, 1 orders ferromagnetically at a critical temperature (T(C)) of 18.5 K. Under application of pressure in the 0-1200 MPa range, the magnetization of the material decreases and its critical temperature shifts to lower temperatures, reaching T(C) = 7.5 K at 1200 MPa. Pressure-dependent Raman and Mossbauer spectroscopy measurements show that this striking behavior is due to the isomerization of some Cr(III)-C[triple bond]N-Fe(II) linkages to the Cr(III)-N[triple bond]C-Fe(II) form. A…
Biestabilidad óptica en GaSe combinando los efectos fototérmico, de fotoconductividad y Joule
1993
La dependencia con la temperatura del coeficiente de absorción del GaSe a 633 nm convierte a este material en idóneo para el diseño de dispositivos biestables a temperatura ambiente.