Proton irradiation-induced reliability degradation of SiC power MOSFET

The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed

Observation of an ultralow- Q -value electron-capture channel decaying to As75 via a high-precision mass measurement

Observation of an ultralow-Q-value electron-capture channel decaying to 75As via a high-precision mass measurement

A precise determination of the atomic mass of 75As has been performed utilizing the double Penning trap mass spectrometer, JYFLTRAP. The mass excess is measured to be −73035.519(42)keV/c2, which is a factor of 21 more precise and 1.3(9)keV/c2 lower than the adopted value in the newest Atomic Mass Evaluation (AME2020). This value has been used to determine the ground-state–to–ground-state electron-capture decay Q value of 75Se and β− decay Q value of 75Ge, which are derived to be 866.041(81) keV and 1178.561(65) keV, respectively. Using the nuclear energy-level data of 860.00(40) keV, 865.40(50) keV (final states of electron capture), and 1172.00(60) keV (final state of β− decay) for the exc…

Observation of an ultralow- Q -value electron-capture channel decaying to As 75 via a high-precision mass measurement

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed