6533b7d0fe1ef96bd125afcd

RESEARCH PRODUCT

Proton irradiation-induced reliability degradation of SiC power MOSFET

K. NiskanenH. KettunenD. SoderstromM. RossiJ. JaatinenA. Javanainen

subject

Nuclear and High Energy Physicsprotonitreliabilityprotonsionisoiva säteilyelektroniikkakomponentitstressNuclear Energy and Engineeringsäteilyfysiikkasilicon carbidelogic gatesradiation effectstransistoritElectrical and Electronic Engineering

description

The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed

http://urn.fi/URN:NBN:fi:jyu-202302091694