0000000000414532
AUTHOR
J.m. Decams
Pulsed Direct liquid Injection ALD of TiO2 Films Using Titanium Tetraisopropoxide Precursor
Abstract TiO 2 thin films are grown by pulsed direct liquid injection atomic layer deposition with rapid thermal heating using titanium tetraisopropoxide and water vapor as precursors. The ALD growth rate is constant in the saturation zone range 35-47 ms at the temperature deposition of 280 °C. The TiO 2 growth rate of 0.018 nm/cycle was achieved in a self-limited ALD mode. SEM and AFM analysis showed the as-deposited films have a smooth surface with a low roughness. XPS analysis exhibited the stoichiometry of TiO 2 in the homogenous depth composition.
TiO2 anatase films obtained by direct liquid injection atomic layer deposition at low temperature
International audience; TiO2 thin films were grown by direct liquid injection atomic layer deposition (DLI-ALD) with infrared rapid thermal heating using titanium tetraisopropoxide and water as precursors. This titanium tetraisopropoxide/water process exhibited a growth rate of 0.018 nm/cycle in a self-limited ALD growth mode at 280 degrees C. Scanning electron microscopy and atomic force microscopy analyses have shown a smooth surface with a low roughness. XPS results demonstrated that the films were pure and close to the TiO2 stoichiometric composition in depth. Raman spectroscopy revealed that the films were crystallized to the anatase structure in the as-deposited state at low temperatu…
CCDC 207942: Experimental Crystal Structure Determination
Related Article: J.Terrematte, S.Daniele, L.G.Hubert-Pfalzgraf, J.M.Decams, H.Guillon, P.Richard|2003|Inorg.Chem.Commun.|6|1039|doi:10.1016/S1387-7003(03)00160-6