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RESEARCH PRODUCT

Pulsed Direct liquid Injection ALD of TiO2 Films Using Titanium Tetraisopropoxide Precursor

Luc ImhoffL. AvrilJ.m. Decams

subject

Materials scienceThin films.technology industry and agricultureTitanium oxidesSurface finishPhysics and Astronomy(all)Titanium tetraisopropoxide precursorAtomic layer depositionX-ray photoelectron spectroscopyChemical engineeringPulsed liquid injection ALDDeposition (phase transition)Thin filmSaturation (magnetic)Water vaporStoichiometry

description

Abstract TiO 2 thin films are grown by pulsed direct liquid injection atomic layer deposition with rapid thermal heating using titanium tetraisopropoxide and water vapor as precursors. The ALD growth rate is constant in the saturation zone range 35-47 ms at the temperature deposition of 280 °C. The TiO 2 growth rate of 0.018 nm/cycle was achieved in a self-limited ALD mode. SEM and AFM analysis showed the as-deposited films have a smooth surface with a low roughness. XPS analysis exhibited the stoichiometry of TiO 2 in the homogenous depth composition.

yearjournalcountryeditionlanguage
2013-01-01Physics Procedia
https://doi.org/10.1016/j.phpro.2013.07.063