0000000000162141
AUTHOR
L. Avril
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…
Pulsed Direct liquid Injection ALD of TiO2 Films Using Titanium Tetraisopropoxide Precursor
Abstract TiO 2 thin films are grown by pulsed direct liquid injection atomic layer deposition with rapid thermal heating using titanium tetraisopropoxide and water vapor as precursors. The ALD growth rate is constant in the saturation zone range 35-47 ms at the temperature deposition of 280 °C. The TiO 2 growth rate of 0.018 nm/cycle was achieved in a self-limited ALD mode. SEM and AFM analysis showed the as-deposited films have a smooth surface with a low roughness. XPS analysis exhibited the stoichiometry of TiO 2 in the homogenous depth composition.
MOCVD growth of porous cerium oxide thin films on silicon substrate
Abstract Porous cerium oxide thin films were grown by pulsed direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on silicon substrate, using cerium tetrakis (1-methoxy-2-methyl-2-propanolate) dissolved in cyclohexane as precursor as well as oxygen as oxidant agent. The chemical and morphological characteristics of the films were investigated by XPS, SEM and TEM. The influence of the growth conditions on the morphological features of the thin films and the cerium chemical states are reported and discussed. The decrease of the oxygen and/or alkoxide flow rate induces the decrease of both the film thickness and the porosity of the layer. Moreover, the growth of silicate…
Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD
Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…
Nanostructured Pt–TiO2 composite thin films obtained by direct liquid injection metal organic chemical vapor deposition: Control of chemical state by X-ray photoelectron spectroscopy
Abstract Nanostructured Pt–TiO 2 composite thin films were synthesized by direct liquid injection metal organic chemical vapor deposition process, using trimethyl(methylcyclopentadienyl)platinum and titanium isopropoxide as precursors. Surface and cross-sectional morphologies obtained by scanning electron microscopy and transmission electron microscopy evidenced the uniform distribution of platinum nanoparticles in the TiO 2 matrix. At higher Pt content, the X-ray diffraction analysis showed that the face-centered cubic phase of platinum appeared together with an anatase TiO 2 structure. In addition, as far as the platinum chemical state is concerned, the co-deposition of TiO 2 and Pt allow…
TiO2 anatase films obtained by direct liquid injection atomic layer deposition at low temperature
International audience; TiO2 thin films were grown by direct liquid injection atomic layer deposition (DLI-ALD) with infrared rapid thermal heating using titanium tetraisopropoxide and water as precursors. This titanium tetraisopropoxide/water process exhibited a growth rate of 0.018 nm/cycle in a self-limited ALD growth mode at 280 degrees C. Scanning electron microscopy and atomic force microscopy analyses have shown a smooth surface with a low roughness. XPS results demonstrated that the films were pure and close to the TiO2 stoichiometric composition in depth. Raman spectroscopy revealed that the films were crystallized to the anatase structure in the as-deposited state at low temperatu…
Thermal stability of Au–TiO2 nanocomposite films prepared by direct liquid injection CVD
Abstract Nanocomposite films composed of gold nanoparticles (AuNPs) embedded in a TiO 2 matrix have been prepared by direct liquid injection chemical vapor deposition process, using preformed nanoparticles and titanium isopropoxide as precursors. The spherical AuNPs about 4.1 nm in diameter were synthesized by using gold (III) chloride trihydrate and stabilized by thiol ligands. The depositions were carried out by performing at first oxide deposition, then gold nanoparticle one and capping with oxide. The morphology, structure; the chemical state and optical properties of nanocomposite films were characterized by scanning electron microscopy, Raman, X-ray photoelectron and UV–Vis absorption…