6533b855fe1ef96bd12b0858
RESEARCH PRODUCT
TiO2 anatase films obtained by direct liquid injection atomic layer deposition at low temperature
Stéphanie BruyèreJ.m. DecamsLuc ImhoffS. Reymond-laruinazL. AvrilValérie PotinM.c. Marco De Lucassubject
AnataseMaterials scienceScanning electron microscope[ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Analytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciencessymbols.namesakeAtomic layer depositionX-ray photoelectron spectroscopyThin filmSurfaces and InterfacesGeneral Chemistry[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and FilmsTitanium oxidechemistry[ CHIM.MATE ] Chemical Sciences/Material chemistrysymbols[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyRaman spectroscopyTitaniumdescription
International audience; TiO2 thin films were grown by direct liquid injection atomic layer deposition (DLI-ALD) with infrared rapid thermal heating using titanium tetraisopropoxide and water as precursors. This titanium tetraisopropoxide/water process exhibited a growth rate of 0.018 nm/cycle in a self-limited ALD growth mode at 280 degrees C. Scanning electron microscopy and atomic force microscopy analyses have shown a smooth surface with a low roughness. XPS results demonstrated that the films were pure and close to the TiO2 stoichiometric composition in depth. Raman spectroscopy revealed that the films were crystallized to the anatase structure in the as-deposited state at low temperature without necessity of high temperature annealing. Results obtained demonstrate that the liquid injection ALD is an efficient method of elaborating titanium oxide films using titanium tetraisopropoxide as precursor.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-01-01 |