0000000000433164

AUTHOR

Teppo Huhtio

showing 3 related works from this author

Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

2013

Impurities in aluminum nitride films prepared by plasma enhanced atomic layer deposition using NH3-, N2/H2- and N2-based plasmas are investigated by combining time-of-flight elastic recoil detection analysis (ERDA) and Fourier transform infrared spectroscopy. Different atomistic growth mechanisms are found to exist between the plasma chemistries. N2-plasma is shown as not suitable for the low-temperature deposition of AlN. Films deposited by NH3- and N2/H2-based processes are nitrogen rich and heavily hydrogenated. Carbon impurities exist at higher concentrations for the N2/H2-processes. The discovery of nitrile groups in the films indicates that carbon impurities can be partially attribute…

Materials scienceAcoustics and UltrasonicsHydrogenAnalytical chemistryInfrared spectroscopychemistry.chemical_elementNitrideCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsElastic recoil detectionAtomic layer depositionCarbon filmchemistryFourier transform infrared spectroscopySpectroscopyJournal of Physics D: Applied Physics
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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2012

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…

Materials scienceta221Analytical chemistryplasma etchingAtomic layer depositionEtch pit densityEtching (microfabrication)SputteringAIN filmsetchingta318Reactive-ion etchingThin filmta216ta116plasma depositionPlasma etchingta213ta114business.industryPhysicsSurfaces and Interfacesatomikerroskasvatusplasma materials processingCondensed Matter PhysicsSurfaces Coatings and Filmsplasmakasvatusthin filmsOptoelectronicsbusinessBuffered oxide etch
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Properties of AlN grown by plasma enhanced atomic layer deposition

2011

Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100–300 °C with plasma discharge times between 2.5 and 30 s. The AlN films were shown to be hydrogen rich having H concentrations in the range of 13–27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the f…

Materials scienceHydrogenta221Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementOxygenPlasmaAtomic layer depositionCrystallinityta318ta216ta116Aluminum nitrideta213ta114Surfaces and InterfacesGeneral ChemistryAtmospheric temperature rangeCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidAtomic Layer DepositionchemistryCarbonRefractive indexApplied Surface Science
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