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RESEARCH PRODUCT
Properties of AlN grown by plasma enhanced atomic layer deposition
Matti PutkonenHarri LipsanenV.m. AiraksinenTimo SajavaaraMikko LaitinenMarkus BosundTeppo Huhtiosubject
Materials scienceHydrogenta221Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementOxygenPlasmaAtomic layer depositionCrystallinityta318ta216ta116Aluminum nitrideta213ta114Surfaces and InterfacesGeneral ChemistryAtmospheric temperature rangeCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidAtomic Layer DepositionchemistryCarbonRefractive indexdescription
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100–300 °C with plasma discharge times between 2.5 and 30 s. The AlN films were shown to be hydrogen rich having H concentrations in the range of 13–27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the films correlated with the hydrogen concentration so that higher concentrations (lower growth temperatures) resulted in smaller refractive index and mass density. The film grown at 300 °C was found to be crystalline whereas lower growth temperature produced amorphous films.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-06-01 | Applied Surface Science |