0000000000433474

AUTHOR

Farokh Irom

showing 3 related works from this author

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

2011

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

Nuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateHigh densityFlash (photography)Nuclear Energy and EngineeringLogic gateAbsorbed doseElectronic engineeringOptoelectronicsHeavy ionElectrical and Electronic EngineeringbusinessDegradation (telecommunications)IEEE Transactions on Nuclear Science
researchProduct

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

2009

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Hardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateFlash memoryNon-volatile memoryFlash (photography)Single event upsetAbsorbed doseComputer data storageCharge pumpElectronic engineeringOptoelectronicsbusiness2009 European Conference on Radiation and Its Effects on Components and Systems
researchProduct

Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories

2010

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…

PhysicsNuclear and High Energy Physicsbusiness.industryNAND gateUpsetNon-volatile memoryFlash (photography)Nuclear Energy and EngineeringSingle event upsetAbsorbed doseCharge pumpElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessScalingIEEE Transactions on Nuclear Science
researchProduct