6533b825fe1ef96bd1283196

RESEARCH PRODUCT

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

Reno Harboe-sorensenFarokh IromAri VirtanenDuc N. Nguyen

subject

Hardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateFlash memoryNon-volatile memoryFlash (photography)Single event upsetAbsorbed doseComputer data storageCharge pumpElectronic engineeringOptoelectronicsbusiness

description

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

yearjournalcountryeditionlanguage
2009-09-012009 European Conference on Radiation and Its Effects on Components and Systems
https://doi.org/10.1109/radecs.2009.5994731