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RESEARCH PRODUCT
Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories
Reno Harboe-sorensenD.n. NguyenFarokh IromAri Virtanensubject
Nuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateHigh densityFlash (photography)Nuclear Energy and EngineeringLogic gateAbsorbed doseElectronic engineeringOptoelectronicsHeavy ionElectrical and Electronic EngineeringbusinessDegradation (telecommunications)description
Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-10-01 | IEEE Transactions on Nuclear Science |