0000000000435161
AUTHOR
Thomas Genevès
CVD elaboration and in situ characterization of barium silicate thin films.
International audience; This study is concerned with the elaboration of barium silicate thin films by metal organic chemical vapor deposition (MOCVD) and in situ characterization by X-ray photoemission spectroscopy (XPS) with an apparatus connected to the deposition reactor. The difficulty to find an efficient metal organic precursor for barium is described. After characterizations of the selected reactant, Ba(TMHD)2tetraglyme, the development of an original specific vapor delivering source which allows reactant sublimation in the CVD reactor was performed. In the most optimized cases, including use of oxygen introduction during the deposition, barium silicate films were obtained. Moreover,…
Fabrication and characterization of barium silicate ultrathin films as an alternative gate oxide
Down-scaling of elementary CMOS elements requires the replacement of SiO2 as a gate oxide. By the identification of the formation conditions of barium silicate in direct contact of a silicon substrate, this study revealed a potential candidate. First of all, a reaction between Ba and SiO2 leading to the formation of barium silicate as been evidenced by in-situ XPS and SR-PES analyses. Then, barium silicate films have been elaborated by oxygen and barium co-deposition at 580 °C. Thermal treatments under vacuum showed that barium silicate was thermally stable up to 900 °C. TEM and SIMS ex-situ analyses revealed a sharp interface with the substrate. Finally, an experimental setup dedicated to …