0000000000441463

AUTHOR

Manon Letiche

showing 3 related works from this author

Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

2020

International audience; In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.

010302 applied physicsMaterials science010308 nuclear & particles physicsNuclear engineering01 natural sciencesNeutron temperature[SPI.TRON]Engineering Sciences [physics]/Electronics0103 physical sciences[INFO.INFO-ES]Computer Science [cs]/Embedded SystemsNeutronIrradiation[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDramBlock (data storage)Dynamic testing2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
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SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

2020

International audience; The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions.

high-energy protonsCOTS[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]käyttömuistitNuclear TheoryElectronHardware_PERFORMANCEANDRELIABILITY01 natural sciences7. Clean energyIonelektroniikkakomponentitNuclear physicsCross section (physics)Pion0103 physical sciencesNeutronionisoimaton säteilyStatic random-access memory010306 general physicsheavy ionsNuclear Experimentlow-energy protonsPhysicsLarge Hadron Collidercross section010308 nuclear & particles physicsionisoiva säteilyelectronsneutronsmuistit (tietotekniikka)SRAMCharacterization (materials science)säteilyfysiikkapionsSEU
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Neutron-Induced Effects on a Self-Refresh DRAM

2022

International audience; The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat fr…

HyperRAMComputer science020209 energykäyttömuistitSelf-Refresh02 engineering and technologyNeutronFault (power engineering)elektroniikkakomponentit0202 electrical engineering electronic engineering information engineering0601 history and archaeologyElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsSafety Risk Reliability and QualitySimulationhiukkassäteilyBlock (data storage)060102 archaeologyEvent (computing)stuck bitsneutronit06 humanities and the artscomputer.file_formatCondensed Matter PhysicsSelf-refreshAtomic and Molecular Physics and OpticsSEESurfaces Coatings and FilmsElectronic Optical and Magnetic Materials[SPI.TRON]Engineering Sciences [physics]/ElectronicsradiationIdentification (information)DRAMsäteilyfysiikkaStuck bitsBitmapNode (circuits)[INFO.INFO-ES]Computer Science [cs]/Embedded SystemscomputerDramDynamic testing
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