Investigations of TiO2 films deposited by different techniques

High refractive TiO2 films deposited by reactive electron beam evaporation, reactive ion plating and dip coating have been characterized by optical spectroscopy, electron spectroscopy for chemical analysis, Rutherford backscattering spectroscopy, nuclear reaction analysis and Raman spectroscopy. The spectral refractive index n exhibits a strong dependence on the deposition conditions. These findings will be connected to variations in density, stoichiometry, hydrogen content (H2O) and binding structure of the layers. A strong correlation is found between optical quantities and microscopic properties of TiO2 films.

Hopping conductivity in NiO thin films

Compaction of tungsten oxide films by ion-beam irradiation

Abstract Evaporated amorphous tungsten oxide films with low densities, deposited on different substrates, have been irradiated with various types of ions of different energies up to 30 MeV, and with fluences up to 10 18 cm −2 . Compaction of the films up to nearly the bulk density was observed. No changes of the stoichiometry as determined by various ion-beam analysis techniques were detectable. Raman measurements showed that ion-beam-modified films are also amorphous, but have a different microstructure from as-deposited films. The irradiated films have a higher refractive index than the as-deposited films. A low threshold for the compaction effect of a few times 10 12 ions cm −2 was found…

Correlated barrier hopping in NiO films

The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.