0000000000454937
AUTHOR
R. Lo Nigro
showing 3 related works from this author
Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition
2010
Zn-doped TiO2 nanofibers shelled with ZnO hierarchical nanoarchitectures have been fabricated combining electrospinning of TiO2 (anatase) nanofibers and metal-organic chemical vapor deposition (MOCVD) of ZnO. The proposed hybrid approach has proven suitable for tailoring both the morphology of the ZnO external shell as well as the crystal structure of the Zn-doped TiO2 core. It has been found that the Zn dopant is incorporated in calcined electrospun nanofibers without any evidence of ZnO aggregates. Effects of different Zn doping levels of Zn-doped TiO2 fibers have been scrutinized and morphological, structural, physico-chemical and optical properties evaluated before and after the hierarc…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
2020
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites was observed in the case of EG and ascribed to the presence of the buffer layer at EG/SiC interface. The deposition process was characterized by Al2O3 island growth in the very early stages, followed by the formation of a continuous Al2O3 film (2.4 nm thick) after only 40 ALD cycles due to the isla…