0000000000455343
AUTHOR
A. Sternberg
Electromechanical properties in CaTiO 3 modified Na 0.5 Bi 0.5 TiO 3 -BaTiO 3 solid solutions above morphotropic phase boundary
This work was supported by Mutual funds Taiwan–Latvia–Lithuania cooperation project (Application No. LV-LT-TW/2020/10). The Institute of Solid State Physics, University of Latvia at the Center of Excellence, received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under Grant Agreement No. 739508, project CAMART.2 This project also received funding from the Research Council of Lithuania (LMTLT; Agreement No. S-LLT-20-4). The authors are also indebted to D. Bocharov for technical assistance.
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …
Quantum paraelectric behavior of pyrochlore PMN
Pb_1.83Mg_0.29Nb_1.71O_6.39 (PMN) crystallizing in a cubic pyrochlore structure exhibits, as the first dielectrics with pyrochlore structure, typical feature of quantum paraelectrics - its permittivity continuously increases on cooling and levels off below ~ 30K, without any signature of a structural phase transition. Broad-band dielectric spectra do not show any dielectric dispersion in the real part of permittivity up to 8.8 GHz. THz and infrared spectra reveal a soft polar optic mode which is responsible for the temperature dependence of the permittivity. The leveling-off of the permittivity at low temperatures obeys the Barrett formula and the fitted vibrational zero-point energy 1/(2*k…
Polarization and acoustic properties of barium-modified lead-free potassium–sodium niobate ceramics
The publication costs of this article were covered by the Estonian Academy of Sciences and the University of Tartu.
Structural characterization of relaxor ferroelectric PbMg 1/3 Nb 2/3 O 3 -PbTiO 3 thin film heterostructures deposited by pulsed laser ablation
Highly oriented and epitaxial films of relaxor ferroelectric PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) with a composition (68/32) near the morphotropic phase boundary were deposited by pulsed laser ablation on La0.5Sr0.5CoO3 bottom electrodes, deposited on MgO (100) and LaAlO3 (100). The formation of crystalline phases, epitaxy, film–electrode–substrate orientation relationships and crystal perfection were studied by X-ray diffraction and scanning electron microscopy. The structural properties were found to depend on the deposition conditions and substrate. Correlation of both the dielectric and relaxor properties in the heterostructures and the structural properties of the PMN-PT films was observed.
Modified YBCO superconductor-ferroelectric composites: Bulk materials and thick films
Bulk samples and 50–125 μm thick films of (1-x)YBa2Cu3O7−δ-xBaTiO3 (0⩽x⩽0.12 by weight) composites have been synthesized, the films being obtained by Stokes sedimentation on SrTiO3 ceramic plates and firing in oxygen by Melt Textured Growth techniques. The phase composition and texture have been studied by X-ray diffraction and microstructure. Resistance and magnetic susceptibility of prepared samples have been measured.
New high piezoelectric coupling PLuNT binary system ceramics
Abstract The new (1 − x)Pb( Lu 1 2 Nb 1 2 ) O 3 − x PbTiO 3 binary system ceramics in the interval 0 0.49). The morphotropic region extends over the interval x = 0.38–0.49, the concentration ratio M:T ≅ 1 corresponds to x = 0.41. The maximum values of the electromechanical coupling coefficients k p = 0.663, k t = 0.481, k 31 = 0.355 of (1 − x)PLuN-xPT ceramics were attained in compositions PLuNT 59/41 (T m = 353 °C) near the morphotropic phase boundary (MPB). The PLuNT system, having large values of electromechanical coupling and the highest T m (> 350 °C) among binary Pb(B′,B″)O 3 -PT perovskites may be favorable for piezoelectric sensors and actuators, and may have an interest as promisin…
Pulsed laser deposition of relaxor ferroelectric films
Heterostructures of perovskite relaxor ferroelectric (RFE) thin films onto La 0.5 Sr 0.5 CoO bottom electrode layers were grown by pulsed laser deposition on MgO(100) crystal substrates. The films were highly oriented, with (h00) planes parallel to the substrate surface, and demonstrated good dielectric and ferroelectric quality at room temperature. The studies of the dielectric properties of the films over the frequency range of 20 Hz....100 kHz and over the temperature range of 0...350°C revealed relaxor type behavior in the films. A diffuse ferroelectric phase transition and a shift of the maximum dielectric permittivity towards higher temperatures with increasing frequency were observed…
Dielectric properties of PLZT-x/65/35 (2 \leqslant x \leqslant 13) under mechanical stress, electric field and temperature loading
We investigated the effect of uniaxial pressure (0-1000 bars) applied parallely to the ac electric field on dielectric properties of PLZT-x/65/35 (2 \leqslant x \leqslant 13) ceramics. There was revealed a significant effect of the external stress on these properties. The application of uniaxial pressure leads to the change of the peak intensity of the electric permittivity (\varepsilon), of the frequency dispersion as well as of the dielectric hysteresis. The peak intensity $\varepsilon$ becomes diffused/sharpened and shifts to a higher/lower temperatures with increasing the pressure. It was concluded that the application of uniaxial pressure induces similar effects as increasing the Ti io…