0000000000493833

AUTHOR

Gilles Gasiot

showing 2 related works from this author

Neutron-induced soft errors in advanced Flash memories

2008

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

PhysicsAstrophysics::High Energy Astrophysical PhenomenaHardware_PERFORMANCEANDRELIABILITYFlash memorySEESettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Computational physicsSettore FIS/03 - Fisica della MateriaReduction (complexity)Flash (photography)CMOSLimit (music)Electronic engineeringNeutronSensitivity (control systems)Error detection and correctionneutron irradiationSEE neutron irradiation
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Low Energy Protons at RADEF - Application to Advanced eSRAMs

2014

A low energy proton facility has been developed at RADEF, Jyvskyl, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.

PhysicsProtonta114ta213business.industryNuclear engineeringElectrical engineeringProton energySEE testLow energyLow energy proton facilitySingle event upsetCalibrationDosimetryMemory testbusiness
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