6533b821fe1ef96bd127ba8b

RESEARCH PRODUCT

Neutron-induced soft errors in advanced Flash memories

S. BeltramiSimone GerardinAngelo ViscontiAlessandro PaccagnellaChristopher D. FrostPhilippe RocheMarta BagatinGiuseppe GoriniR. Harboe SorensenS. P. PlattGilles GasiotM. BonanomiAri VirtanenA. PietropaoloGiorgio CellereCarla AndreaniP.g. Fuochi

subject

PhysicsAstrophysics::High Energy Astrophysical PhenomenaHardware_PERFORMANCEANDRELIABILITYFlash memorySEESettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Computational physicsSettore FIS/03 - Fisica della MateriaReduction (complexity)Flash (photography)CMOSLimit (music)Electronic engineeringNeutronSensitivity (control systems)Error detection and correctionneutron irradiationSEE neutron irradiation

description

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

yearjournalcountryeditionlanguage
2008-12-01
10.1109/iedm.2008.4796693http://hdl.handle.net/2108/23668