0000000000116325
AUTHOR
Christopher D. Frost
showing 4 related works from this author
Dynamic Test Methods for COTS SRAMs
2014
International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmos…
Neutron-induced soft errors in advanced Flash memories
2008
Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.
Measurements of Low-Energy Protons using a Silicon Detector for Application to SEE Testing
2021
A silicon detector with a fast electronics chain is used for the dosimetry of protons in the range 0.5-5 MeV at the Centro Nacional de Aceleradores (CNA) 3 MV Tandem laboratory in Seville, Spain. In this configuration, measurements can be performed in pulsed mode, using a digitizer to record event-by-event proton energy depositions. The distributions of deposited energy were obtained thanks to a calibration with an alpha source. Measurements of flux and deposited energy are used to enable single event effect (SEE) testing on selected static random access memories (SRAMs).
Methodologies for the Statistical Analysis of Memory Response to Radiation
2016
International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.