6533b7d0fe1ef96bd125a42b

RESEARCH PRODUCT

Dynamic Test Methods for COTS SRAMs

Luigi DililloArto JavanainenViyas GuptaPatrick GirardGeorgios TsiligiannisHelmut PuchnerAlexandre Louis BosserChristopher D. FrostLaurent DusseauFrédéric WrobelAri VirtanenAlberto BosioArnaud VirazelFrédéric Saigné

subject

Pseudorandom number generatorsingle event upset (SEU)Nuclear and High Energy Physicsta114ta213Computer scienceCOTSneutrons65 nmmultiple cell upset (MCU)SRAMColumn (database)[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringElectronic engineering90 nmHeavy ionStatic random-access memoryElectrical and Electronic Engineeringheavy ionsNeutron irradiationWord (computer architecture)dynamic testDynamic testing

description

International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology.

yearjournalcountryeditionlanguage
2014-10-30IEEE Transactions on Nuclear Science
10.1109/tns.2014.2363123https://doi.org/10.1109/TNS.2014.2363123