6533b86ffe1ef96bd12cde55
RESEARCH PRODUCT
Methodologies for the Statistical Analysis of Memory Response to Radiation
Viyas GuptaChristopher D. FrostAli ZadehLuigi DililloArto JavanainenAlexandre Louis BosserFrédéric WrobelFrédéric SaignéHelmut PuchnerJukka JaatinenGeorgios TsiligiannisAri Virtanensubject
Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testingdescription
International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-07-14 |