0000000000530639
AUTHOR
Dieter Bimberg
Gain Dynamics after Ultrashort Pulse Trains in Quantum Dot based Semiconductor Optical Amplifiers
We study the gain dynamics in QD-based SOAs after excitation with fs-pulse trains of up to THz repetition rates. A complete ground-state gain recovery is found for 200 GHz repetition rates and injection currents around 90 mA.
Ultrafast Gain Recovery in Quantum Dot based Semiconductor Optical Amplifiers
Summary form only given. The limiting factor in ultrahigh bit rate amplification is the ultrafast population recovery in the resonant level, which is mainly limited by carrier capture and relaxation processes in the QD. We use pump-probe measurements resonant to the QDs confined states energies (ground and excited state) to investigate the response to a four fs-pulse train of 1 THz repetition rate. A deep insight about the capture process implied is then obtained, and direct capture from the wetting layer is identified as the dominant mechanism in the high current regime.
Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures
Abstract We have found that the energy splitting between peaks in the linearly polarized emission from the cleaved surface of an InAs/GaAs monolayer structure triples with increasing temperature in the range from 5 to 150 K. For each polarization the main emission line corresponds to the radiative recombination of either heavy or light-hole excitons bound to the monolayer. The striking temperature behavior of the peak energies originates from the different hole–phonon coupling due to the much larger penetration of the light-hole envelope function into the GaAs. We prove this assertion by confining the light holes to the InAs plane with a strong magnetic field, which leads to a reduction of …