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RESEARCH PRODUCT
Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures
Stephanie ReichChristian ThomsenAlejandro R. GoñiPaulo V. SantosFrank HeinrichsdorffH. ScheelAndrés CantareroDieter Bimbergsubject
PhotoluminescenceCondensed matter physicsLinear polarizationChemistryAstrophysics::High Energy Astrophysical PhenomenaExcitonHeterojunctionGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsPolarization (waves)Condensed Matter::Materials ScienceMonolayerMaterials ChemistrySpontaneous emissionEmission spectrumdescription
Abstract We have found that the energy splitting between peaks in the linearly polarized emission from the cleaved surface of an InAs/GaAs monolayer structure triples with increasing temperature in the range from 5 to 150 K. For each polarization the main emission line corresponds to the radiative recombination of either heavy or light-hole excitons bound to the monolayer. The striking temperature behavior of the peak energies originates from the different hole–phonon coupling due to the much larger penetration of the light-hole envelope function into the GaAs. We prove this assertion by confining the light holes to the InAs plane with a strong magnetic field, which leads to a reduction of the temperature dependence of the heavy–light hole splitting.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-09-01 | Solid State Communications |