X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)

Abstract TiO 2 and TiN x O y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO 2 [1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 A/min) of TiO 2 and (−40 A/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ϕ -scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.