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RESEARCH PRODUCT
X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)
E. AbramofF. FabreguetteLisandro Pavie CardosoM. SacilottiTh. Chiaramontesubject
Materials scienceGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryChemical vapor depositionSubstrate (electronics)Condensed Matter PhysicsSurfaces Coatings and FilmsCrystallographyLattice constantchemistryDeposition (phase transition)Metalorganic vapour phase epitaxyCrystalliteThin filmTindescription
Abstract TiO 2 and TiN x O y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO 2 [1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 A/min) of TiO 2 and (−40 A/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ϕ -scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-11-01 | Applied Surface Science |