0000000000147493
AUTHOR
Lisandro Pavie Cardoso
showing 5 related works from this author
Growth of nanometric CuGaxOystructures on copper substrates
2005
This paper presents an alternative method based on the metal–organic chemical vapour deposition technique to obtain new nanowire structures. Here, the metal–organic precursor acts as a catalyst and interacts with a metallic substrate to produce 3D structures such as nanowires. In the present case, trimethyl gallium interacts with a copper metallic substrate to build a single-crystalline CuGaxOy wire structure. Electronic microscopy techniques on image or diffraction modes have provided the structural and chemical characterization of the obtained nanowires.
Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD
2009
Abstract Cathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5–2.8 eV) excited from the GaN in the 3D structures.
X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)
2006
Abstract TiO 2 and TiN x O y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO 2 [1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 A/min) of TiO 2 and (−40 A/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ϕ -scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.
Structural characterization of TiNxOy/TiO2 single crystalline and nanometric multilayers grown by LP-MOCVD on (110)TiO2
2001
TiO2/TiNxOy superlattices were grown by Low Pressure-Metal-Organic Vapor Phase Epitaxy (LP-MOVPE) technique at deposition temperatures ranking from 650 to 750°C. The growth was performed on top of TiO2(110) rutile substrates. Intense peaks observed in the X-rays rocking curves and θ-2θ diffraction patterns show the presence of crystalline epilayers. The TiNxOy layers were grown in a (200) cubic structure on the (110) quadratic TiO2 epilayer structure. Transmission electron microscopy confirmed the XRD results and showed the formation of periodic and well structured epilayers.
Structural characterization of TiO2/TiN O (δ-doping) heterostructures on (1 1 0)TiO2 substrates
2003
Abstract TiO2/TiNxOy δ-doping structures were grown on the top of (1 1 0)TiO2 rutile substrates by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) technique at 750 °C. The samples were analyzed by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and X-ray diffraction techniques (rocking curves and φ-scans). The presence of satellites in the (1 1 0)TiO2 rocking curve revealed the epitaxial growth of 10 period δ-doping structures. The thickness of the TiO2 layers, 84 nm, was deduced from the satellites period. HRTEM observations showed around 1.5 nm thick δ-doping layers, where the presence of nitrogen was detected by EELS. The analy…