0000000000147492

AUTHOR

Th. Chiaramonte

showing 3 related works from this author

Growth of nanometric CuGaxOystructures on copper substrates

2005

This paper presents an alternative method based on the metal–organic chemical vapour deposition technique to obtain new nanowire structures. Here, the metal–organic precursor acts as a catalyst and interacts with a metallic substrate to produce 3D structures such as nanowires. In the present case, trimethyl gallium interacts with a copper metallic substrate to build a single-crystalline CuGaxOy wire structure. Electronic microscopy techniques on image or diffraction modes have provided the structural and chemical characterization of the obtained nanowires.

DiffractionAlternative methodsMaterials scienceMechanical EngineeringNanowirechemistry.chemical_elementBioengineeringNanotechnologyGeneral ChemistryChemical vapor depositionCopperCatalysisCharacterization (materials science)chemistryMechanics of MaterialsGeneral Materials ScienceElectrical and Electronic EngineeringGalliumNanotechnology
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Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD

2009

Abstract Cathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5–2.8 eV) excited from the GaN in the 3D structures.

Materials scienceBiophysicsAnalytical chemistrychemistry.chemical_elementMineralogyCathodoluminescenceGallium nitrideGeneral ChemistryChemical vapor depositionNitrideCondensed Matter PhysicsBiochemistryAtomic and Molecular Physics and Opticschemistry.chemical_compoundchemistryMetalorganic vapour phase epitaxyGalliumSpectroscopyVisible spectrumJournal of Luminescence
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X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)

2006

Abstract TiO 2 and TiN x O y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO 2 [1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 A/min) of TiO 2 and (−40 A/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ϕ -scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.

Materials scienceGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryChemical vapor depositionSubstrate (electronics)Condensed Matter PhysicsSurfaces Coatings and FilmsCrystallographyLattice constantchemistryDeposition (phase transition)Metalorganic vapour phase epitaxyCrystalliteThin filmTinApplied Surface Science
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