0000000000593996

AUTHOR

Julie Karel

0000-0002-0537-7419

showing 3 related works from this author

Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy

2014

The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off-stoichiometric Co${}_{2}$MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co${}_{2}$Mn${}_{1.29}$Si. In this paper, we explain the behavior of the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co…

Tunnel magnetoresistanceMaterials scienceX-ray photoelectron spectroscopyCondensed matter physicsFerromagnetismAb initio quantum chemistry methodsBand gapContent (measure theory)HeterojunctionThin filmCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhysical Review B
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Influence of nanoscale order–disorder transitions on the magnetic properties of Heusler compounds for spintronics

2017

Modifications in nanoscale chemical order are used to tune the magnetic properties, namely T-C, of Co2FeSixAl1-x (0 < x < 1). High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with Z-contrast reveals nanoscale regions of L2(1) order within a B2 matrix in the off-stoichiometry samples. Perhaps surprisingly, the latter, more chemically disordered structure, exhibits a higher T-C. Upon annealing, the off-stoichiometry samples become more homogeneous with the fraction of L2(1) order decreasing. The short-range order was also investigated using X-ray absorption fine structure (XAFS) measurements at the Co and Fe K edges. Since the local atomic environments of C…

Materials scienceSpintronicsAnnealing (metallurgy)02 engineering and technologyGeneral Chemistryengineering.material021001 nanoscience & nanotechnologyHeusler compound01 natural sciencesDark field microscopyALLOYS; DESIGNSpectral lineX-ray absorption fine structureCrystallographyK-edgeChemical physics0103 physical sciencesScanning transmission electron microscopyMaterials Chemistryengineering010306 general physics0210 nano-technologyJournal of Materials Chemistry C
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Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states

2016

Abstract A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the…

010302 applied physicsSpectrum analyzerRadiationPhysics - Instrumentation and DetectorsSpin polarizationSpectrometerScatteringbusiness.industryChemistryFOS: Physical sciencesPolarimeterInstrumentation and Detectors (physics.ins-det)Condensed Matter Physics01 natural sciencesAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsOpticsX-ray photoelectron spectroscopyElectron diffraction0103 physical sciencesPhysical and Theoretical Chemistry010306 general physicsSpectroscopybusinessSpectroscopy
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