Les premiers instants de la croissance de films minces d'oxydes métalliques par MOCVD : Etude in situ de l'interface TiO2/Si par XPS-ARXPS.

2006

Communication orale

Pulsed laser growth and characterization of thin films on titanium substrates (Poster)

2006

Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

2007

International audience; HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on inicrocantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the nonlinear behavior observed for SiO2 layer can be explained by a combination of deep and lateral …