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RESEARCH PRODUCT
Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid
J. Mertens Eric Finot O. Heintz Marie-hélène Nadal V. Eyraud Arnaud Cathelat Guillaume Legay Eric Bourillot Alain Dereuxsubject
atomic force microscope (AFM)[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicssiliconX-ray photoelectron spectroscopy (XPS)HYDROGEN-FLUORIDECORROSIONRESONANCEAQUEOUS HYDROFLUORIC-ACIDhydrofluoric acid (HF)sensorCERAMICSMICROCANTILEVERSsecondaryEOLEOLion mass spectroscopy (SIMS)[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsSI(111) SURFACESCANTILEVERS[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicscantileverGAS SENSORSdescription
International audience; HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on inicrocantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the nonlinear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etchina. The cantilever bending is discussed in terms of free surface energy, layer thickness and grain size. (c) 2006 Elsevier B.V All rights reserved.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-01-01 |