0000000000683981
AUTHOR
D. Kulikov
<title>Irradiation effects in lead zirconate thin films</title>
Lead zirconate PbZrO3 (PZ) and PbZr0.53Ti0.47O3 (PZT) sol-gel films with a thickness of up to 1.5 μm were deposited on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating technique and heterostructures of the same composition as well as on Pb0.92La0.08 (Zr0.65Ti0.35)O3 (PLZT-8) (with a thickness of 0.4 μm) were pulse laser deposited (PLD) on Pt/Ti/SiO2/Si. Observation of a typical antiferroelectric (AFE) double hysteresis loop in obtained PZ heterostructures at room temperature was attributed to the superior dielectric strength in case of thin film materials. The thermal behavior of dielectric permittivity e of PZ film reveals a maximum near 225°C on heating and 219°C on cooling. The higher res…
Gaussian models for the distribution of Brownian particles in tilted periodic potentials
We present two Gaussian approximations for the time-dependent probability density function (PDF) of an overdamped Brownian particle moving in a tilted periodic potential. We assume high potential barriers in comparison with the noise intensity. The accuracy of the proposed approximated expressions for the time-dependent PDF is checked with numerical simulations of the Langevin dynamics. We found a quite good agreement between theoretical and numerical results at all times.
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.