0000000000740546

AUTHOR

V. Privitera

showing 3 related works from this author

Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films

2008

Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.

SiliconMaterials scienceSTRESSPhysics and Astronomy (miscellaneous)SiliconAnalytical chemistrychemistry.chemical_elementGalliumEpitaxySettore FIS/03 - Fisica Della MateriaLAYERSsymbols.namesakeImpurityDOPANTPhase (matter)Semiconductor dopingKINETICSSemiconducting silicon compoundDopantAmorphous filmGermaniumSettore ING-INF/03 - TelecomunicazioniFermi levelDopingAmorphous siliconPhosphoruEpitaxial filmAmorphous solidchemistrysymbolsSOLID-PHASE EPITAXY
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Sputtered cuprous oxide thin films and nitrogen doping by ion implantation

2016

Abstract The structural, optical and electrical properties of sputtered cuprous oxide thin films have been optimized through post-deposition thermal treatments. Moreover we have studied the effects of nitrogen doping introduced by ion implantation followed by the optimized oxidant thermal annealing. Three concentrations have been used, 0.6 N%, 1.2 N%, and 2.5 N%. Along with the preservation of the Cu 2 O phase, a slight optical band gap narrowing and a significant conductivity enhancement has been observed with respect to the undoped samples. These results can be justified by the absence of further oxygen vacancies promoted by dopant introduction and by the substitution of O atoms by N ones…

OxidantPostimplantation annealingLattice configurationMaterials scienceBand gapAnnealing (metallurgy)NitrogenInorganic chemistryOxidePhotovoltaic application02 engineering and technology01 natural sciencesOxygen vacancieSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundSputtering0103 physical sciencesMaterials ChemistryDopingSemiconductor dopingConductivity enhancementDoping (additives)Thin filmIonDepositionOxide film010302 applied physicsDopantDopingMetals and AlloysSputteringSurfaces and Interfaces021001 nanoscience & nanotechnologyOut of equilibriumSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsEnergy gapOptical and electrical propertieIon implantationchemistryIon implantationThermal-annealing0210 nano-technologyCopperCuprous oxide
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MATERIALS AND PROCESSING ISSUES FOR THE MANUFACTURING OF INTEGRATED PASSIVE AND ACTIVE DEVICES ON FLEXIBLE SUBSTRATES

2008

Plast_ICs is a Public/Private Laboratory funded by Italian Government aimed to build a novel technological platform for the development of flexible electronics, mainly, but not solely, based on thin inorganic films. Integration of different functions, on single and/or multiple plastic foils, to generate a smart system is the final goal of the project. The building blocks of the platform will be presented, starting from the different plastic substrates characterization, going through the development of active devices, such as thin-film- transistors, and passive devices, like thin-film- resistors, capacitors, inductors. Fully inorganic elementary devices, based on optical patterning and in va…

Materials scienceDEVICES FLEXIBLE ELECTRONICS PLASTIC ELECTRONICSTransistorComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISIONEngineering physicsFlexible electronicslaw.inventionCharacterization (materials science)CapacitorThin-film transistorlawElectronic engineeringThin filmPhotolithographyResistorSettore CHIM/02 - Chimica Fisica
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